Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme

Authors

Philippe Leduc, Power Microelectronic Laboratory (L.M.P),Tours University,16 rue Pierre et Marie Curie, 37071 Tours Cedex 2. Application and System Engineering STMicroelectronics,16 rue Pierre et Marie Curie, 37071 Tours Cedex 2.
Didier Magnon, Power Microelectronic Laboratory (L.M.P),Tours University,16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, FRANCE
Fabrice Guitton, Application and System Engineering STMicroelectronics,16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, FRANCE

Abstract

Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN) resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate"). The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

Recommended Citation

Leduc, Philippe; Magnon, Didier; and Guitton, Fabrice (2002) Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme, Sultan Qaboos University Journal For Science: Vol. 7: Iss. 1, 71-80.
DOI: https://doi.org/10.24200/squjs.vol7iss1pp71-80
Available at: https://squjs.squ.edu.om/squjs/vol7/iss1/14